HRXRD相关论文
Epitaxial vanadium dioxide thin films with different thicknesses were deposited on Al2O3 (0001) substrates by using a po......
Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemic
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
采用LP-MOCVD在蓝宝石基片上外延生长了Mg掺杂p-GaN,并对样品进行了退火处理。利用高分辨X射线衍射(HRXRD)对经不同退火时间处理后......
A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO fil......
A high-quality GaN film was (W-GaN) grown by hydride vapor phase epitaxy (HVPE) on metalorganic chemical vapor depositio......
Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN ......
Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherfor......
如何表征SiGe/Si异质外延薄膜中的应变对提升SiGe器件的性能至关重要.本文详细介绍了卢瑟福背散射/沟道效应(RBS/C)、高分辨率X射......
随着紫外探测器的应用不断向更深紫外波段延伸,高Al组分AlGaN材料及AlGaN紫外探测器的研究成为紫外探测技术的主要发展方向之一。......
本文给出了X射线衍射动力学理论中偏离因子的普遍表达式 ,并且从理论上证明了此表达式比原有理论更加精确。一个InGaN/GaN多量子阱......
Single crystal of D-(–)-alanine (DALA), a non-linear optical material from the amino acid family was grown using a home......
A high-quality GaN film was (W-GaN) grown by hydride vapor phase epitaxy (HVPE) on metalorganic chemical vapor depositio......
Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN ......
本文给出了X射线衍射动力学理论中偏离因子的普遍表达式,并且从理论上证明了此表达式比原有理论更加精确.一个InGaN/GaN多量子阱样......
碳化硅材料具有高熔点、高热导率低中子反应截面和耐腐蚀等优点,适用于具有高温、高通量中子辐照环境的先进核能系统中。中子辐照......
通过MOCVD设备，在c面蓝宝石衬底上异质外延了不同Al组分含量的AlGa1-xN材料。生长过程中采用了低温缓冲层技术、脉冲原子外延技术（PA......
